description: the central semiconductor cmkd6263 con- tains three (3) galvanically isolated, high voltage silicon schottky diodes, epoxy molded in a sot-363 surface mount package. this ul tramini tm device has been designed for fast switching applications requiring a low forward voltage drop. marking code: k63 maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 70 v continuous forward current i f 15 ma forward surge current, tp=1 .0s i fsm 50 ma power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r =50v 98 200 na bv r i r =10a 70 v v f i f =1.0ma 395 410 mv c t v r =0, f=1.0mhz 2.0 pf t rr i r =i f =10ma, i rr =1.0ma, r l =100 5.0 ns cmkd6263 surface mount ultramini tm triple isolated high voltage silicon schottky diodes sot-363 case central semiconductor corp. tm r3 (21-november 2008) features: ? meets galvanic isolation ? ultramini tm package requirements of ieee 1394 ? requires less board space than 3 individual diodes ? high voltage (70v) ? low forward voltage
central semiconductor corp. tm cmkd6263 surface mount ultramini tm triple isolated high voltage silicon schottky diodes r3 (21-november 2008) sot-363 case - mechanical outline lead code: 1) anode d1 2) anode d2 3) anode d3 4) cathode d3 5) cathode d2 6) cathode d1 marking code: k63 pin configuration
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